features x built-in b ias resis tors ena ble the con figuration of an inv erte r circuit without connecting external input resistors (see equivalent circuit) x the bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. they also have the advantage of almost completely eliminating parasitic effects x only the on/off conditions need to be set for operation, making device design easy absolute maximum ratings parameter symbol value unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current-continuous i c -100 ma collector dissipation p c 150m w junction temperature range t j -55~150 : storage temperature range t stg -55~150 : electrical characteristics sym parameter min typ max unit v (br)cbo collector-base breakdown voltage (i c =-50ua, i e =0) -50 --- --- v v (br)ceo collector-emitter breakdown voltage (i c =-1ma, i b =0) -50 --- --- v v (br)ebo emitter-base breakdown voltage (i e =-50ua, i c =0) -5 --- --- v i cbo collector cut-off current (v cb =-50v, i e =0) --- --- -0.5 ua i ebo emitter cut-off current (v eb =-4v, i c =0) --- --- -0.5 ua h fe dc current gain (v ce =-5v, i c =-1ma) 100 250 600 --- v ce(sat) collector-emitter saturation voltage (i c =-10ma, i b =-1ma) --- --- -0.3 v r 1 input resistor f t transition frequency (v ce =-10v, i c =-5ma, f=100mhz) --- 250 --- mhz sot-523 710 13 k ? * marking: 94 epoxy meets ul 94 v-0 flammability rating moisure sensitivity level 1 DTA114TE pnp digital transistor 2012- 0 willas electronic corp. dimensions in inches and (millimeters) .043(1.10) .035(0.90) .069(1.75) .057(1.45) .004(0.10)min. .008(0.20) .004(0.10) .035(0.90) .028(0.70) .006(0.15) .014(0.35) .004(0.10)max. .067(1.70) .059(1.50) .035(0.90) .028(0.70) .014(0.35) .010(0.25)
2012- 0 willas electronic corp. DTA114TE pnp digital transistor
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